Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions
Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions
复制标题
基于铁电隧道结的无损读出互补电阻开关
DOI：
10.1021/acsami.7b18363
复制
发表时间：
2018
影响因子：
9.5
通讯作者：
Zheng Wen
中科院分区：
文献类型：
--
作者：
Zhongnan Xi;Chunyan Zheng;Zheng Wen
近年来，互补电阻开关（CRSs）由于能有效地抑制交叉棒存储阵列固有的漏电问题而引起了广泛的关注。在这项工作中，我们提出了一种新的基于背对背串联Pt/BaTiO3/Nb: srtio3铁电隧道结（FTJs）的无损读出CRS器件。由于BaTiO3/Nb: srtio3界面的肖特基势垒上的铁电增强，FTJ元件不仅表现出非易失性电阻开关，而且在高阻态（HRS）表现出典型的类二极管输运。利用整流特性，可以很好地区分互补的HRS + LRS（低阻状态）和LRS + HRS状态，并通过亚阈值电压无损读出。此外，Pt/BaTiO3/Nb:SrTiO3CRS交叉棒阵列中的潜流被明显抑制，最大缩放尺寸比仅由单个ftj器件构成的阵列增加了约50倍。这些结果有助于基于交叉栅结构的高性能阻性存储器的设计。
Recently, complementary resistive switches (CRSs) have attracted considerable attention because of the effective suppression of the sneak leakage that is an inherent problem of crossbar memory arrays. In this work, we propose a new CRS device enabling nondestructive readout based on back-to-back in-series Pt/BaTiO3/Nb:SrTiO3ferroelectric tunnel junctions (FTJs). The FTJ elements exhibit not only a nonvolatile resistance switching but also a typical diode-like transport in the high-resistance state (HRS) because of the ferroelectric enhancement on the Schottky barrier of the BaTiO3/Nb:SrTiO3interface. With the rectifying characteristic, the complementary HRS + LRS (low-resistance state) and LRS + HRS states can be well-distinguished and nondestructively read out by a subthreshold voltage. In addition, the sneak current is significantly suppressed in the Pt/BaTiO3/Nb:SrTiO3CRS crossbar array, and the maximum scaling size is increased by about 50 times, in comparison to the array constituted by only the single-FTJ devices. These results facilitate the design of high-performance resistive memories based on the crossbar architecture.