ALD-passivated silicon nanowires for broadband absorption applications
ALD-passivated silicon nanowires for broadband absorption applications
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DOI：
10.1063/5.0054104
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发表时间：
2021-06
期刊：
影响因子：
1.6
通讯作者：
Felix Kimeu;S. Albin;K. Song;Kevin C. Santiago
中科院分区：
文献类型：
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作者：
Felix Kimeu;S. Albin;K. Song;Kevin C. Santiago
Silicon photonics enables the fabrication of optical devices with standard semiconductor processing technology. With high transparency and modal confinement, Si has matured into a well-established infrared optical material. Nanostructured silicon has been studied extensively due to its optical properties, especially silicon nanowires due to the myriad of available fabrication techniques, the broad range of physical dimensions, and the resulting optical characteristics. In this study, we fabricate silicon nanowires using a wet chemical process and modify their absorptive properties via atomic layer deposition passivation. The passivated nanowires absorb 95% of light from the visible to infrared, with a minimal angular dependence, making them excellent candidates for broadband absorber applications.
