Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
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DOI：
10.1007/s10762-009-9564-9
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发表时间：
2009-12-01
影响因子：
2.9
通讯作者：
Otsuji, Taiichi
中科院分区：
文献类型：
--
作者：
Knap, Wojciech;Dyakonov, Mikhail;Otsuji, Taiichi
场效应晶体管中二维等离子体的共振频率随着沟道尺寸的减小而增大，在亚微米栅长下可以达到太赫兹范围。晶体管沟道中电子等离子体的非线性特性可用于太赫兹频率的检测和混频。在低温下，观察到与等离子体波共振相关的共振和门电压可调谐探测。在室温下，当等离子体振荡过阻尼时，FET可以作为有效的宽带THz探测器工作。我们提出的主要理论和实验结果太赫兹探测场效应晶体管的背景下，他们可能的应用太赫兹成像。
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.