Multiband envelope function model for quantum transport in a tunneling diode
Multiband envelope function model for quantum transport in a tunneling diode
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隧道二极管中量子传输的多带包络函数模型
DOI：
10.1103/physrevb.71.235331
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
M. Modugno
中科院分区：
文献类型：
--
作者：
O. Morandi;M. Modugno
我们提出了一个简单的模型，在半导体器件中的电子输运表现出导带和价带之间的隧穿。该模型是在通常的布洛赫-瓦尼尔形式主义由k-展开，并制定了一组耦合方程的电子包络函数。它与文献中存在的其他模型的连接进行了讨论。作为一个应用，我们考虑的情况下，谐振带间调谐二极管，证明了该模型的能力，以重现预期的行为的电流作为一个功能的应用电压
We present a simple model for electron transport in semiconductor devices that exhibit tunneling between the conduction and valence bands. The model is derived within the usual Bloch-Wannier formalism by a k-expansion, and is formulated in terms of a set of coupled equations for the electron envelope functions. Its connection with other models present in literature is discussed. As an application we consider the case of a Resonant Interband Tunneling Diode, demonstrating the ability of the model to reproduce the expected behaviour of the current as a function of the applied voltage