Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates
Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates
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同轴 PVT 生长衬底上 4H-SiC 层的液相外延
DOI：
10.4028/www.scientific.net/msf.615-617.137
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
R. Hattori
中科院分区：
文献类型：
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作者：
K. Kusunoki;K. Kamei;Nobuyoshi Yashiro;R. Hattori
我们使用Si溶剂在轴向4H-SiC衬底上进行了SiC层的液相外延生长。结果表明，脱毛层的多型可控性与生长工艺条件密切相关。通过优化它们，可以完全抑制脱毛机中的多型混合。结果表明，由于轴向生长，脱毛层中的基面位错密度比衬底中的小得多。SIMS分析表明，脱毛层中微量杂质元素（B、Al、Ti、V、Cr、Fe、Ni、P）的浓度均在较低的检出限内。唯一的杂质是产生n型层的氮。载流子浓度从高1016 cm-3到低1017cm-3都可以实现。
We performed liquid phase epitaxial growth of SiC layers on on-axis 4H-SiC substrates using Si solvent. It was found that the polytype controllability of the epilayer significantly depends on the growth process conditions. By optimizing them, polytype mixing in the epilayers can be completely suppressed. It is shown that the density of basal plane dislocations in the epilayers is much less than in the substrates due to on-axis growth. SIMS analysis showed that the concentrations of trace impurity elements (B,Al,Ti,V,Cr,Fe,Ni,P) in the epilayers are under lower detection limit. The only impurity is nitrogen resulting in an n-type layer. Carrier concentrations Nd-Na ranging from high 1016 to low 1017cm-3 are achievable.