Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride
Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride
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DOI：
10.1088/2053-1583/ab6269
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发表时间：
2020-01
期刊：
影响因子：
5.5
通讯作者：
V. Babenko;Ye Fan;Vlad-Petru Veigang-Radulescu;B. Brennan;A. Pollard;Oliver J. Burton;J. Alexander-Webber;R. Weatherup;B. Canto;M. Otto;D. Neumaier;S. Hofmann
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文献类型：
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作者：
V. Babenko;Ye Fan;Vlad-Petru Veigang-Radulescu;B. Brennan;A. Pollard;Oliver J. Burton;J. Alexander-Webber;R. Weatherup;B. Canto;M. Otto;D. Neumaier;S. Hofmann
六方氮化硼（h-BN）是二维材料技术中必不可少的支撑、封装和屏障材料，最近也被用作从双曲超表面到室温单光子源的各种应用的活性材料。目前迫切需要具有成本效益，可扩展和高质量的h-BN层生长技术。我们利用广泛可用的铁箔进行h-BN的催化化学气相沉积（CVD），并报告了大量溶解物质在h-BN CVD中的重要作用，特别是溶解氧和碳之间的平衡。铁箔的一个简单的预生长调理步骤使我们能够定制一个容错的可扩展CVD工艺，以提供超大的h-BN单层结构域。我们还开发了一种简便的方法，通过控制湿度氧化和随后的薄界面氧化铁的快速蚀刻，来改善生长h-BN从铁表面的转移；因此，避免了杂质从箔的大块。我们演示了晶圆级（2″）生产，并利用这种h-BN作为石墨烯的保护层，用于集成（光电）电子器件制造。
Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Cost-effective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron foils for the catalytic chemical vapour deposition (CVD) of h-BN and report on the significant role of bulk dissolved species in h-BN CVD, and specifically, the balance between dissolved oxygen and carbon. A simple pre-growth conditioning step of the iron foils enables us to tailor an error-tolerant scalable CVD process to give exceptionally large h-BN monolayer domains. We also develop a facile method for the improved transfer of as-grown h-BN away from the iron surface by means of the controlled humidity oxidation and subsequent rapid etching of a thin interfacial iron oxide; thus, avoiding the impurities from the bulk of the foil. We demonstrate wafer-scale (2″) production and utilise this h-BN as a protective layer for graphene towards integrated (opto-)electronic device fabrication.