Structure-property-processing relationships of single-wall carbon nanotube thin film piezoresistive sensors

Structure-property-processing relationships of single-wall carbon nanotube thin film piezoresistive sensors
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DOI:
10.1016/j.carbon.2013.03.024
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发表时间:
2013-08-01
期刊:
影响因子:
10.9
通讯作者:
Liu, Tao
Liu, Tao
中科院分区:
材料科学2区
文献类型:
--
作者:
Luo, Sida;Liu, Tao

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在对 SWCNT 薄膜压阻传感器的结构-性能-加工关系的研究中,发现传感器在小拉伸变形(小于 2% 应变)下的应变系数接近于 1,并且对薄膜厚度和 SWCNT 束长度 (L) 和直径 (d) 的依赖性可以忽略不计。然而,对于大的拉伸变形(20-30%应变),薄膜厚度和SWCNT的微观结构对压阻行为具有复合效应。对于使用短长度和细直径(L = 549 nm 和 d = 3.7 nm)且薄膜较厚的 SWCNT 束制造的传感器,获得了类似于 5 的规格系数。此外,发现传感器的规格系数与 SWCNT 束的排除体积 V-ex 成反比(V-ex 与 1/L-2 d 成正比)。 (C) 2013 Elsevier Ltd. 保留所有权利。
In an investigation of structure-property-processing relationships for SWCNT thin film piezoresistive sensors, the gauge factor of the sensors for a small tensile deformation (less than 2% strain) was found to be close to unity and showed negligible dependence on the film thickness and SWCNT bundle length (L) and diameter (d). However, for a large tensile deformation (20-30% strain), the film thickness and the microstructure of SWCNTs had a compounding effect on the piezoresistive behavior. A gauge factor of similar to 5 was obtained for the sensors fabricated with SWCNT bundles of short length and thin diameter (L = 549 nm and d = 3.7 nm) with thicker films. Furthermore, the gauge factor of the sensors was found inversely proportional to the excluded volume V-ex of SWCNT bundles (V-ex proportional to 1/L-2 d). (C) 2013 Elsevier Ltd. All rights reserved.