Fano resonances in near-field absorption in all-dielectric multilayer structures
Fano resonances in near-field absorption in all-dielectric multilayer structures
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DOI：
10.1088/2040-8986/aaea5a
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发表时间：
2018-11
影响因子：
2.1
通讯作者：
Byungjun Kang;M. Fujii;D. Nesterenko;Z. Sekkat;S. Hayashi
中科院分区：
文献类型：
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作者：
Byungjun Kang;M. Fujii;D. Nesterenko;Z. Sekkat;S. Hayashi
扩展我们以前的研究金属介质多层结构，我们证明了在全介质多层结构中产生和控制高Q Fano谐振的可行性。所研究的结构由两个波导层（Ge掺杂的SiO2和Al2O3层）分隔的间隔层（SiO2层），并安排在Kretschmann衰减全反射几何形状。从基于电磁理论的分析中，我们揭示了Fano谐振产生于由Ge掺杂的SiO2层支持的宽波导模式和由Al2O3层支持的尖锐波导模式之间的相互作用。这种机制使我们能够产生类似的法诺共振与p和s偏振入射光。虽然在各种纳米结构和超材料中基于辐射模式的Fano共振仅出现在远场响应中，但我们表明，本Fano共振不仅出现在远场反射光谱中，而且还出现在近场吸收光谱中。
Extending our previous studies on metal-dielectric multilayer structures, we demonstrate the feasibility of generating and controlling high-Q Fano resonances in all-dielectric multilayer structures. The structures studied consist of two waveguide layers (Ge-doped SiO2 and Al2O3 layers) separated by spacer layers (SiO2 layers) and arranged in the Kretschmann attenuated total reflection geometry. From analyses based on the electromagnetic theory, we reveal that the Fano resonance arises from the interaction between a broad waveguide mode supported by the Ge-doped SiO2 layer and a sharp waveguide mode supported by the Al2O3 layer. This mechanism allows us to generate similar Fano resonances with both the p- and s-polarized incident light. Although the Fano resonances based on radiative modes in a variety of nanostructures and metamaterials have been reported to appear only in the far-field responses, we show that the present Fano resonances appear not only in the far-field reflection spectra but also in the near-field absorption spectra.