A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process
A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process
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DOI：
10.1007/s11432-016-0301-3
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发表时间：
2017-01
期刊：
影响因子：
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通讯作者：
Qian Zhou;Yan Han;Shifeng Zhang;Xiaoxia Han;Lu Jie;R. Cheung;Guangtao Feng
中科院分区：
文献类型：
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作者：
Qian Zhou;Yan Han;Shifeng Zhang;Xiaoxia Han;Lu Jie;R. Cheung;Guangtao Feng
对更高数据传输速率的需求，特别是在现代通信系统中，多年来一直在增加。例如，IEEE标准802.15。3c规定了超过2gbps的数据传输速率，将频段推高到60ghz。在收发器中，压控振荡器的工作频率在60ghz，这引起了很多人的研究[1,2]。然而，由于CMOS器件固有的截止频率限制，通过CMOS技术实现高速压控振荡器（VCO）可能极具挑战性。LC-tank VCO结构可以解决这一问题[3]，但其相位噪声差，功耗高[4,5]。在以往的研究中，研究人员采用了本征调谐技术和电容分裂技术来提高压控振荡器的性能，但这两种技术都比较复杂。当频率增加时，由于电路节点在不同状态下切换速度加快，压控振荡器的功耗也会显著增加。变容器的Q因子也会迅速劣化，导致压控振荡器在较高频率下的相位噪声劣化。例如,
Dear editor, Demand for higher data transmission rate, particularly in the modern communication systems, has been increasing over the years. For example, the IEEE standard 802.15. 3c specifies more than 2 Gbps data transmission rate, which pushes the frequency band up to 60 GHz. In the transceiver, the working frequency of VCO is in 60 GHz, and that has attracted many people to study it [1, 2]. However, implementing high speed voltagecontrolled oscillator (VCO) through CMOS technology can be extremely challenging because of the intrinsic cut-off frequency limitation of CMOS devices. The LC-tank VCO structure can be used to address this issue [3], but its phase noise is poor and the power consumption is high [4, 5]. In the previous studies, the researchers use the intrinsictuned technique and capacitance-splitting technique to improve VCO performance, but they are complicated [6].When the frequency increases, the power consumption of VCO will also increase significantly because the circuit nodes switch faster in different states. The Q factor of varactor will also deteriorate rapidly and cause deterioration of the VCO phase noise at a higher frequency. For example,