Stress-induced oxide leakage
Stress-induced oxide leakage
复制标题
应力引起的氧化物泄漏
DOI：
10.1109/55.119221
复制
发表时间：
1991
影响因子：
4.9
通讯作者：
C. Hu
中科院分区：
文献类型：
--
作者：
R. Rofan;C. Hu
研究了5 nm热氧化物中电压应力引起的漏电。漏电流和电荷泵电流之间的相关性是显而易见的，在一系列的电压应力，退火和再应力测试。紧密的相关性表明，泄漏可能是氧化物陷阱辅助隧穿的结果。数据支持涉及陷阱状态的模型。<<ETX>>
Voltage-stress-induced leakage in 5-nm thermal oxides was studied. A correlation between the leakage current and the charge-pumping current was evident in a series of voltage stress, annealing, and restress tests. The close correlation suggests that the leakage may be a result of the oxide-trap assisted tunneling. Data supporting a model involving trap states are presented.<<ETX>>