Suspended single-layer MoS2 devices
Suspended single-layer MoS2 devices
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DOI：
10.1063/1.4827477
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发表时间：
2013-10-28
影响因子：
3.2
通讯作者：
Lee, Changgu
中科院分区：
文献类型：
--
作者：
Jin, Taiyu;Kang, Jinyeong;Lee, Changgu
我们已经制造和其特征在于悬浮单层二硫化钼设备，以调查对二硫化钼的电性能的衬底效应。首先通过使用电子束光刻在Si/SiO2上制造MoS 2器件，并且通过用缓冲氧化物蚀刻剂蚀刻掉SiO2层的一半并用临界点干燥器干燥它们来使其悬浮。与SiO2衬底支撑的器件相比，悬浮的器件显示出2-10倍的迁移率和开/关比改善。在测量电子性能时，我们观察到悬挂的器件通过焦耳加热退火并显示出性能改善，而支撑的器件没有。我们的观察结果表明，二硫化钼设备是基板敏感的电气性能和适当的基板和清洁是必要的最佳设备性能。(C)2013 AIP Publishing LLC.
We have fabricated and characterized suspended single-layer MoS2 devices to investigate the substrate effect on the electrical properties of MoS2. The MoS2 devices were fabricated on Si/SiO2 first by using e-beam lithography and were suspended by etching away half of the SiO2 layer with buffered oxide etchant and drying them with critical point dryer. Compared with SiO2 substrate-supported devices, the suspended devices show 2-10 times of mobility and on/off ratio improvement. While measuring the electronic properties, we observed that the suspended devices were annealed by joule heating and showed the performance improvement, whereas the supported devices did not. Our observations reveal that MoS2 devices are substrate-sensitive in their electrical properties and that proper substrates and cleaning is necessary for the optimal device performance. (C) 2013 AIP Publishing LLC.