Effect of contact spreading layer on photovoltaic response of InGaN‐based solar cells
Effect of contact spreading layer on photovoltaic response of InGaN‐based solar cells
复制标题
DOI：
10.1002/pssa.201026289
复制
发表时间：
2011-01
期刊：
影响因子：
--
通讯作者：
Xinhe Zheng;L. Tang;Dongyang Zhang;J. Dong;Hui Yang
中科院分区：
文献类型：
--
作者：
Xinhe Zheng;L. Tang;Dongyang Zhang;J. Dong;Hui Yang
不同的导电膜被用作p-GaN电流扩展层，以探索InGaN/GaN双异质结太阳能电池的光伏作用。发现具有200 nm厚的氧化铟锡（ITO）透明扩散层的器件与具有3 nm Ni/3 nm Au透明金属的器件相比，显示出填充因子的非常小的降低，但是由于到达太阳能电池的光量增加，前者显示出短路电流密度提高了24%。这种可用光的改善表现在透射率和外量子效率的增加上。
Different conductive films are used as p‐GaN current spreading layers in order to explore photovoltaic action of InGaN/GaN double heterojunction solar cells. It is found that the devices with the 200‐nm thick indium‐tin oxide (ITO) transparent spreading layers shows a very small decrease in fill factor compared to those with the 3‐nm Ni/3‐nm Au semitransparent metal, but the former demonstrates an enhancement of short‐circuit current density by 24% due to the increased amount of light that reaches the solar cell. This improvement in usable light is shown by the increase in transmission and external quantum efficiency.