Systematic study of surface morphology, photoluminescence efficiency, and spin-detection sensitivity in (110)-oriented GaAs/AlGaAs quantum wells
Systematic study of surface morphology, photoluminescence efficiency, and spin-detection sensitivity in (110)-oriented GaAs/AlGaAs quantum wells
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DOI：
10.7567/jjap.55.113001
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发表时间：
2016-11-01
影响因子：
1.5
通讯作者：
Yuasa, Shinji
中科院分区：
文献类型：
--
作者：
Iba, Satoshi;Saito, Hidekazu;Yuasa, Shinji
利用分子束外延（MBE）技术在不同生长条件下制备了（110）取向GaAs/AlGaAs多量子阱（MQW）样品，并在室温下对样品的表面形貌、光致发光（PL）和自旋探测灵敏度进行了系统的测量。在温度>= 450 ℃和As-4/Ga流量比>= 40的条件下生长的样品具有良好的表面平整度和高的PL强度。结果表明，在相同的MBE系统中，（110）多量子阱的光致发光强度高于传统的（100）多量子阱。同时，我们也证实了（110）多量子阱的自旋探测灵敏度比（100）多量子阱高一个数量级。这些结果表明，新开发的（110）多量子阱确实有更大的优势，比传统的（100）多量子阱用于新兴的自旋光学器件，如自旋控制激光器。(C)2016日本应用物理学会
We prepared (110)-oriented GaAs/AlGaAs multiple-quantum-well (MQW) samples by molecular beam epitaxy (MBE) under different growth conditions, and conducted systematic measurements of surface morphology, photoluminescence (PL), and spin-detection sensitivity at room temperature. Excellent surface flatness and high PL intensity were observed for the samples grown at temperatures >= 450 degrees C and As-4/Ga flux ratios >= 40. It was found that the PL intensity of (110) MQWs was higher than that of the conventional (100) MQWs grown using the same MBE system. At the same time, we confirmed that the spin-detection sensitivity of (110) MQWs we obtained was an order of magnitude higher than that of the (100) MQWs. These results suggest that the newly developed (110) MQWs indeed have greater advantages than the conventional (100) MQWs for use in emerging spin-optical devices such as spin-controlled lasers. (C) 2016 The Japan Society of Applied Physics