Compact silicon neuron circuit with spiking and bursting behaviour
Compact silicon neuron circuit with spiking and bursting behaviour
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DOI：
10.1016/j.neunet.2007.12.037
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发表时间：
2008-03-01
期刊：
影响因子：
7.8
通讯作者：
Dudek, Piotr
中科院分区：
文献类型：
--
作者：
Wijekoon, Jayawan H. B.;Dudek, Piotr
一个硅神经元电路，产生尖峰和突发放电模式，与生物学上合理的尖峰形状，提出。该电路模仿已知类别的皮层神经元的行为：规则尖峰（RS），快速尖峰（FS），抖动（CH）和内在爆发（IB）。本文介绍了电路的操作，提供了仿真结果，一个简化的分析模型，和其行为的相平面分析。该电路的功能已通过实验验证。本文介绍了一种概念验证模拟集成电路，在0.35 μ m CMOS工艺实现，并提出了初步的测量结果。神经元细胞提供了硅皮质神经元的面积和能量有效的实现，并且可以用作与皮质电路非常相似的VLSI神经形态网络中的通用神经元电路。(C)2008爱思唯尔有限公司保留所有权利。
A silicon neuron circuit that produces spiking and bursting firing patterns, with biologically plausible spike shape, is presented. The circuit mimics the behaviour of known classes of cortical neurons: regular spiking (RS), fast spiking (FS), chattering (CH) and intrinsic bursting (IB). The paper describes the operation of the circuit, provides simulation results, a simplified analytical model, and a phase-plane analysis of its behaviour. The functionality of the circuit has been verified experimentally. The paper introduces a proof-of-concept analogue integrated circuit, implemented in a 0.35 mu m CMOS technology, and presents preliminary measurement results. The neuron cell provides an area and energy efficient implementation of the silicon cortical neuron, and could be used as a universal neuron circuit in VLSI neuromorphic networks that closely resemble the circuits of the cortex. (C) 2008 Elsevier Ltd. All rights reserved.