Reading a GEM with a VLSI pixel ASIC used as a direct charge collecting anode
Reading a GEM with a VLSI pixel ASIC used as a direct charge collecting anode
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DOI：
10.1016/j.nima.2004.07.269
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发表时间：
2004-12-11
影响因子：
1.4
通讯作者：
Soffitta, P
中科院分区：
文献类型：
--
作者：
Bellazzini, R;Angelini, F;Soffitta, P
在微图案气体检测器（MPGD）中，当像素尺寸低于100 μ m并且像素的数量很大（高于1000）时，实际上不可能使用传统的PCB读出方法将信号电荷从单个像素带到外部电子链。出于这个原因，一个定制的CMOS阵列的2101个有源像素与80微米间距，直接用作GEM放大结构的电荷收集阳极，已经开发和建造。每个电荷收集垫，六边形，实现使用深亚微米超大规模集成电路技术的顶部金属层是单独连接到一个完整的电子链（前置放大器，整形放大器，采样和保持，多路复用器），这是建立在它下面立即使用其余五个有源层。GEM和漂移电极窗口直接组装在芯片上，因此ASIC本身成为MPGD的像素化阳极。通过这种方法，气体探测器首次达到了固态像素探测器典型的集成度和分辨率水平。本文介绍了这一新读出概念的首次测试结果。还讨论了天文X射线偏振测量的应用。(C)2004 Elsevier B.V.保留所有权利。
In MicroPattern Gas Detectors (MPGD) when the pixel size is below 100 mum and the number of pixels is large (above 1000) it is virtually impossible to use the conventional PCB read-out approach to bring the signal charge from the individual pixel to the external electronics chain. For this reason a custom CMOS array of 2101 active pixels with 80 mum pitch, directly used as the charge collecting anode of a GEM amplifying structure, has been developed and built. Each charge collecting pad, hexagonally shaped, realized using the top metal layer of a deep submicron VLSI technology is individually connected to a full electronics chain (pre-amplifier, shaping-amplifier, sample & hold, multiplexer) which is built immediately below it by using the remaining five active layers. The GEM and the drift electrode window are assembled directly over the chip so the ASIC itself becomes the pixelized anode of a MPGD. With this approach, for the first time, gas detectors have reached the level of integration and resolution typical of solid-state pixel detectors. Results from the first tests of this new read-out concept are presented. An Astronomical X-ray Polarimetry application is also discussed. (C) 2004 Elsevier B.V. All rights reserved.