Comparison of metrology methods for quantifying the line edge roughness of patterned features
Comparison of metrology methods for quantifying the line edge roughness of patterned features
复制标题
量化图案特征线边缘粗糙度的计量方法比较
DOI：
10.1116/1.591117
复制
发表时间：
1999
影响因子：
1.4
通讯作者：
T. Lyszczarz
中科院分区：
文献类型：
--
作者：
C. Nelson;S. Palmateer;A. R. Forte;T. Lyszczarz
比较是由两个原子力显微镜在不同的操作模式，和两个扫描电子显微镜，一个高，一个较低的分辨率，用于量化抗蚀剂和硅的图案化特征的边缘粗糙度。给出了边缘粗糙度幅值和空间频率的定义。对于每种计量方法，讨论了限制边缘粗糙度测量的参数以及它们如何与限制临界尺寸测量的参数进行比较。还讨论了量化边缘粗糙度空间频率的尝试。对于两种最佳计量方法，确定测量的可重复性，并进行测量以了解它们之间的相关性。
Comparisons are made of two atomic force microscopes in different modes of operation, and two scanning electron microscopes, one high and one lower resolution for quantifying the edge roughness of patterned features in resist and silicon. Definitions of the edge roughness magnitude and spatial frequency are given. For each metrology method, the parameters that limit the edge roughness measurement and how they compare to the parameters that limit the critical dimension measurement are addressed. An attempt to quantify the edge roughness spatial frequency is also discussed. For the two best metrology methods the repeatability of the measurements was determined, and measurements were made to understand the correlation between them.