High temperature oxidation behavior of Ti3SiC2-based material in air
High temperature oxidation behavior of Ti3SiC2-based material in air
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DOI：
10.1016/s1359-6454(01)00247-6
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发表时间：
2001-12
期刊：
影响因子：
9.4
通讯作者：
Z. Sun;Yang-tao Zhou;M. Li
中科院分区：
文献类型：
--
作者：
Z. Sun;Yang-tao Zhou;M. Li
研究了Ti3SiC2基材料在900°C至1200°C的空气中的氧化行为。目前的工作表明，Ti3SiC2基材料上氧化皮的生长在900℃至1100℃范围内遵循抛物线规律，而在1200℃时则遵循线性规律。 1000℃以上氧化皮一般由外层粗粒TiO2（金红石）和内层细粒TiO2和SiO2（鳞石英）组成。在 1100°C 和 1200°C 氧化的样品上，在外部粗粒 TiO2 层内观察到不连续的粗粒 SiO2 层。标记实验表明，氧化过程受氧向内扩散、钛和CO或SiO向外扩散控制，且以内氧化为主。 Ti3SiC2中TiC含量不利于Ti3SiC2的抗氧化性能。
The oxidation behavior of Ti3SiC2-based material in air has been studied from 900°C to 1200°C. The present work showed that the growth of the oxide scale on Ti3SiC2-based material obeyed a parabolic law from 900°C to 1100°C, while at 1200°C it followed a linear rule. The oxide scale was generally composed of an outer layer of coarse-grained TiO2(rutile) and an inner layer of fine-grained TiO2and SiO2(tridymite) above 1000°C. A discontinuous coarse-grained SiO2layer was observed within the outer coarse-grained TiO2layer on the samples oxidized at 1100°C and 1200°C. Marker experiments showed that the oxidation process was controlled by the inward diffusion of oxygen, outward diffusion of titanium and CO or SiO, and that internal oxidation predominated. The TiC content in Ti3SiC2was deleterious to the oxidation resistance of Ti3SiC2.