Thermal characterization of direct wafer bonded Si-on-SiC
Thermal characterization of direct wafer bonded Si-on-SiC
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DOI：
10.1063/5.0080668
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发表时间：
2022-03
影响因子：
4
通讯作者：
D. Field;J. Pomeroy;F. Gity;M. Schmidt;Pasqualino Torchia;Fan Li;P. Gammon;V. Shah;Martin Kuball
中科院分区：
文献类型：
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作者：
D. Field;J. Pomeroy;F. Gity;M. Schmidt;Pasqualino Torchia;Fan Li;P. Gammon;V. Shah;Martin Kuball
直接键合的Si-on-SiC是绝缘体上硅（SOI）的一种有趣的替代方案，用于改善空间功率转换和射频应用中的热管理。我们已经使用瞬态热反射和有限元模拟表征的热性能的直接键合的Si-对-4 H-SiC样品，利用疏水和亲水键合过程。在这两种情况下，界面具有良好的热性能，导致TBReff值为6 + 4/−2 m2 K GW−1（疏水）和9 + 3/−2 m2 K GW−1（亲水）。等效MOSFET的二维有限元模拟显示，使用Si-on-SiC比使用SOI具有显着的热优势。在这些模拟中，在SOI结构（2 μm埋氧层）和此处表征的Si-on-SiC材料上重新创建了具有200 nm厚、42 μm宽的Si漂移区的MOSFET。在5 W mm−1功耗下，与SOI结构相比，Si-on-SiC的温升降低了60%以上。
Direct bonded Si-on-SiC is an interesting alternative to silicon-on-insulator (SOI) for improved thermal management in power conversion and radio frequency applications in space. We have used transient thermoreflectance and finite element simulations to characterize the thermal properties of direct bonded Si-on-4H–SiC samples, utilizing a hydrophobic and hydrophilic bonding process. In both instances, the interface has good thermal properties resulting in TBReff values of 6 + 4/−2 m2 K GW−1 (hydrophobic) and 9 + 3/−2 m2 K GW−1 (hydrophilic). Two-dimensional finite element simulations for an equivalent MOSFET showed the significant thermal benefit of using Si-on-SiC over SOI. In these simulations, a MOSFET with a 200 nm thick, 42 μm wide Si drift region was recreated on a SOI structure (2 μm buried oxide) and on the Si-on-SiC material characterized here. At 5 W mm−1 power dissipation, the Si-on-SiC was shown to result in a >60% decrease in temperature rise compared to the SOI structure.