Induced Superconducting Pairing in Integer Quantum Hall Edge States
Induced Superconducting Pairing in Integer Quantum Hall Edge States
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DOI：
10.1021/acs.nanolett.2c01413
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发表时间：
2022-07-22
期刊：
影响因子：
10.8
通讯作者：
Shabani, Javad
中科院分区：
文献类型：
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作者：
Hatefipour, Mehdi;Cuozzo, Joseph J.;Shabani, Javad
砷化铟（InAs）近表面量子阱（QW）有望用于制造半导体超导体异质结构，因为它们允许量子阱中的二维状态与超导体中的二维状态之间的强杂化。在这项工作中，我们展示了位于超导 NbTiN 附近的量子霍尔区中 InAs 量子阱的结果。我们观察到下游电阻为负，霍尔（上游）电阻相应减少，这与非常高的安德烈夫转换一致。我们使用 Landauer-Buttiker 形式主义分析实验数据，并进行推广以允许 Andreev 反射过程。我们将器件中安德烈夫转换的高效率归因于 InAs/NbTiN 界面的高透明度以及随之而来的 QH 边缘模式与超导体中状态的强杂化。
Indium arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor- superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work, we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. We analyze the experimental data using the Landauer-Buttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.