POCl3 Annealing as a New Method for Improving 4H-SiC MOS Device Performance
POCl3 Annealing as a New Method for Improving 4H-SiC MOS Device Performance
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POCl3 退火作为提高 4H-SiC MOS 器件性能的新方法
DOI：
10.1149/05003.0257ecst
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
and T. Fuyuki
中科院分区：
文献类型：
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作者：
H. Yano;T. Hatayama;and T. Fuyuki
研究了 POCl3 退火对 4H-SiC 上金属氧化物半导体 (MOS) 器件电性能的影响。显示了未退火、NO 退火和 POCl3 退火 MOS 器件的比较结果。 POCl3退火比传统的NO退火更有效地降低界面态密度并提高沟道迁移率。还研究了退火氧化物的击穿特性和可靠性。 POCl3退火并没有使氧化物击穿场恶化太多。与时间相关的介电击穿特性表明由于氧化物中电子捕获的增强而导致不同的行为。这与磷在氧化物中的均匀分布有关。在低氧化物场 (< 3 MV/cm) 下，由于氧化物中的界面陷阱和近界面陷阱导致的平带电压偏移非常小，而在高氧化物场 (> 5 MV/cm) 下，注入的电子很容易被捕获在 POCl3 退火氧化物中。通过结合NO和POCl3退火，实现了相对较高的沟道迁移率和稳定的电子注入特性。
Effects of POCl3 annealing on the electrical properties of metaloxide-semiconductor (MOS) devices on 4H-SiC were investigated. Comparative results of non-annealed, NO-annealed, and POCl3-annealed MOS devices are shown. POCl3 annealing is more effective to reduce interface state density and improve channel mobility than conventional NO annealing. Breakdown characteristics and reliability of annealed oxides were also investigated. POCl3 annealing did not deteriorate oxide breakdown field very much. Time-dependent dielectric breakdown characteristics indicated different behavior due to enhanced electron trapping in the oxide. It is related with uniformly distributed phosphorus in the oxide. Flat-band voltage shift due to interface traps and near-interface traps in the oxide was very small at low oxide fields (< 3 MV/cm), whereas injected electrons were easily trapped in the POCl3 annealed oxide at high oxide fields (> 5 MV/cm). By combination of NO and POCl3 annealing, relatively high channel mobility and stabilized characteristics against electron injection were achieved.