Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices
Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices
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DOI：
10.1063/1.2387982
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发表时间：
2006-11
影响因子：
4
通讯作者：
R. Ma;L. Dai;H. Huo;Wen-Xing Yang;G. Qin;P. Tan;C. Huang;J. Zheng
中科院分区：
文献类型：
--
作者：
R. Ma;L. Dai;H. Huo;Wen-Xing Yang;G. Qin;P. Tan;C. Huang;J. Zheng
通过原位铟掺杂化学气相沉积方法合成了高质量的n型CdS纳米带（NB），并将其制成场效应晶体管（FET）。这些CdS纳米带的电子浓度和迁移率分别为（1.0 × 10（16）~ 3.0 × 10（17））/cm（3）和100-350 cm（2）/Vs。在室温下获得了大于10（8）的开关比和65 mV/decade的亚阈值摆幅，这是迄今为止报道的CdS纳米线/纳米带FET的最佳性能。制备了n型CdS NB/p（+）-Si异质结发光二极管。它们的电致发光光谱主要由强烈的尖锐的带边发射和自由深能级缺陷发射。(c)2006年，美国物理学会。
High quality n-type CdS nanobelts (NBs) were synthesized via an in situ indium doping chemical vapor deposition method and fabricated into field effect transistors (FETs). The electron concentrations and mobilities of these CdS NBs are around (1.0x10(16)-3.0x10(17))/cm(3) and 100-350 cm(2)/V s, respectively. An on-off ratio greater than 10(8) and a subthreshold swing as small as 65 mV/decade are obtained at room temperature, which give the best performance of CdS nanowire/nanobelt FETs reported so far. n-type CdS NB/p(+)-Si heterojunction light emitting diodes were fabricated. Their electroluminescence spectra are dominated by an intense sharp band-edge emission and free from deep-level defect emissions. (c) 2006 American Institute of Physics.