Modification of zirconia film properties by low‐energy ion bombardment during reactive ion‐beam deposition
Modification of zirconia film properties by low‐energy ion bombardment during reactive ion‐beam deposition
复制标题
反应离子束沉积过程中低能离子轰击改变氧化锆薄膜性能
DOI：
10.1063/1.345030
复制
发表时间：
1990
影响因子：
3.2
通讯作者：
G. Gorman
中科院分区：
文献类型：
--
作者：
A. S. Kao;G. Gorman
研究了低能离子轰击对反应离子束沉积氧化锆膜结构和性能的影响。在薄膜生长过程中对100 eV Ar+的轰击可以引起残余应力的显著松弛，这是通过增加吸附原子的迁移率来改变结构的结果。同时，氧在衬底表面的增强扩散提高了氧吸除能力或膜的化学计量比。高达600 °C的热退火后的结构变化表明，在没有合金稳定剂的情况下，细晶(200-400A)立方氧化锆能稳定到室温。在薄膜生长过程中，低能Ar+的冲击导致了沉积时的薄膜微结构，这种微结构促进了沉积后退火的立方相晶体的生长以及薄膜平面向(111)取向的织构。结果表明，氧化锆膜的折射率和光学透过率主要取决于薄膜的折射率和透过率。
The effect of low‐energy ion bombardment on the structure and properties of zirconia films deposited by reactive ion‐beam process is investigated. Bombardment of 100‐eV Ar+ during film growth is shown to induce a substantial relaxation of the residual stress as a result of structural modification by the increased mobility of adatoms. Concurrently, the oxygen gettering capability, or film stoichiometry, is improved by the enhanced diffusion of oxygen on substrate surface. The structural change by thermal annealing, up to 600 °C, demonstrates that fine‐grained (200–400 A) cubic zirconia can be stabilized down to room temperature without alloying stabilizers. The impingement of low‐energy Ar+ during film growth results in an as‐deposited film microstructure which promotes the growth of the cubic‐phase crystallites upon post‐deposition annealing as well as the texturing of film plane into (111) orientation. The refractive index and optical transmission of the zirconia films are shown to be dependent predomina...