High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices
High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices
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DOI：
10.1063/1.3573867
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发表时间：
2011-04
影响因子：
4
通讯作者：
S. A. Pour;E. Huang;G. Chen;A. Haddadi;B. Nguyen;M. Razeghi
中科院分区：
文献类型：
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作者：
S. A. Pour;E. Huang;G. Chen;A. Haddadi;B. Nguyen;M. Razeghi
为了提高中波红外InAs/GaSb II型超晶格光电二极管在高温下的性能，确定并抑制了占主导地位的暗电流机制。优化后的异质结光电二极管在2 μm厚有源区的量子效率为50%，且无偏压依赖性。在150 K下，当50%截止波长为4.2μm时，R 0 A为5100 Ω cm ~ 2，比探测率为1.05×1012 cm Hz ~（0.5）/W。假设300 K背景温度和2π视场，检测器的性能在高达180 K的背景限制下，与同质结光电二极管相比提高了25 °C。使用f/2.3光学器件和10.02 ms积分时间的红外成像表明，在低于120 K的工作温度下，噪声等效温差为11 mK。
The dominant dark current mechanisms are identified and suppressed to improve the performance of midwave infrared InAs/GaSb type-II superlattice photodiodes at high temperatures. The optimized heterojunction photodiode exhibits a quantum efficiency of 50% for 2 μm thick active region without any bias dependence. At 150 K, R0A of 5100 Ω cm2 and specific detectivity of 1.05×1012 cm Hz0.5/W are demonstrated for a 50% cutoff wavelength of 4.2μm. Assuming 300 K background temperature and 2π field of view, the performance of the detector is background limited up to 180 K, which is improved by 25 °C compared to the homojunction photodiode. Infrared imaging using f/2.3 optics and an integration time of 10.02 ms demonstrates a noise equivalent temperature difference of 11 mK at operating temperatures below 120 K.