Diamond Film Preparation by Arc Discharge Plasma Jet Chemical Vapor Deposition in the Methane Atmosphere

Diamond Film Preparation by Arc Discharge Plasma Jet Chemical Vapor Deposition in the Methane Atmosphere
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DOI:
10.1149/1.2086540
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发表时间:
1990-02
影响因子:
3.9
通讯作者:
N. Ohtake;M. Yoshikawa
N. Ohtake;M. Yoshikawa
中科院分区:
工程技术4区
文献类型:
--
作者:
N. Ohtake;M. Yoshikawa

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采用电弧放电等离子体喷射化学气相沉积法在甲烷气氛中合成了金刚石薄膜。所研制的装置能连续产生稳定的等离子体射流12 h以上。等离子体射流由氢和氩组成。用作大气气体并混合到等离子体射流中。等离子体射流被喷射到冷却的基底上,并且金刚石膜被沉积在基底表面上。用这种方法在钼衬底上以930 μm/h的生长速率沉积了金刚石薄膜。通过X射线衍射和拉曼光谱测量金刚石膜的结晶度。通过这种方法在单位时间内获得的金刚石重量似乎与通过高温高压合成方法获得的金刚石重量几乎相同。
Diamond films are synthesized by arc discharge plasma jet chemical vapor deposition in the methane atmosphere. The apparatus developed generates a stabilized plasma jet continuously for more than 12h. The plasma jet consists of hydrogen and argon. is used as an atmospheric gas and is mixed into the plasma jet. The plasma jet is sprayed onto a cool‐down substrate, and a diamond film is deposited on the substrate surface. By means of this method, a diamond film is deposited on a molybdenum substrate at the growth rate of 930 μm/h. The crystallinity of the diamond film measures well by means of x‐ray diffraction and Raman spectroscopy. The weight of diamond obtained by this method in a unit time seems to be almost the same as that obtained by high‐temperature and high‐pressure synthesis method.