Electronegative oligothiophenes based on difluorodioxocyclopentene-annelated thiophenes: Synthesis, properties, and n-type FET performances
Electronegative oligothiophenes based on difluorodioxocyclopentene-annelated thiophenes: Synthesis, properties, and n-type FET performances
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DOI：
10.1021/ol7029678
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发表时间：
2008-03-06
期刊：
影响因子：
5.2
通讯作者：
Aso, Yoshio
中科院分区：
文献类型：
--
作者：
Le, Yutaka;Umemoto, Yoshikazu;Aso, Yoshio
合成了一系列含二氟二氧环戊烯环化噻吩单元的低聚噻吩类化合物，并通过光谱、电化学和X射线衍射等方法研究了它们的电子性质和结构.具有末端二氟二氧代环戊烯环化的低聚噻吩在FET器件上显示出n型半导体行为，并且四噻吩显示出高达1.3 x 10（-2）cm（2）V-1 s（-1）的场效应电子迁移率。
A series of oligothiophenes containing difluorodioxocyclopentene-annelated thiophene units was synthesized, and their electronic properties and structures were investigated by spectroscopic and electrochemical measurements and X-ray analyses. The oligothiophenes having the terminal difluorodioxocyclopentene annelations showed n-type semiconducting behavior on FET devices, and the quaterthiophene revealed field-effect electron mobility as high as 1.3 x 10(-2) cm(2) V-1 s(-1).