Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1−y molecular‐beam epitaxial layers
Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1−y molecular‐beam epitaxial layers
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异质外延InAsySb1−y分子束外延层的透射电子显微镜和透射电子衍射结构研究
DOI：
10.1063/1.353440
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发表时间：
1993
影响因子：
3.2
通讯作者：
G. Booker
中科院分区：
文献类型：
--
作者：
T. Seong;A. Norman;I. Ferguson;G. Booker
分子束外延InAsySb1 - y层在295 ~ 470℃的温度范围内生长。透射电子显微镜和透射电子衍射（TED）检查表明，对于在400°C及以下生长，标称成分0.4<y<0.8的层，分离成两相，导致一系列交替的板近似平行于层表面。TED表明，两相的立方晶格呈四方畸变，其组成为典型的InAs0.38Sb0.62和InAs0.72Sb0.28。与[110]方向相比，[110]方向上的板块更大、更规则。当生长温度从295℃增加到400℃时，标称成分为InAs0.5Sb0.5的层的板长从0.1 μm增加到2.0 μm，板厚从10 nm增加到50 nm。晶体缺陷存在于不同的层中，并且在相分离和非相分离的层中存在不同的缺陷。
Molecular‐beam epitaxy InAsySb1−y layers were grown at temperatures ranging from 295 to 470 °C across the full composition range. Transmission electron microscopy and transmission electron diffraction (TED) examinations showed that for layers grown at and below 400 °C with nominal compositions 0.4<y<0.8, separation into two phases occurred resulting in a series of alternating plates approximately parallel to the layer surface. TED showed that the cubic lattices of the two phases were tetragonally distorted and their compositions were deduced to be typically InAs0.38Sb0.62 and InAs0.72Sb0.28. The plates were larger and more regular along the [110] direction than the [110] direction. As the growth temperature increased from 295 to 400 °C, for layers of nominal composition InAs0.5Sb0.5, the plate length increased from 0.1 to 2.0 μm and the plate thickness from 10 to 50 nm. Crystallographic defects were present in the layers and their occurrence was different in the phase‐separated and non‐phase‐separated la...