Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films
Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films
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DOI：
10.1063/1.3489882
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发表时间：
2010-10-01
影响因子：
3.2
通讯作者：
Yong, Kijung
中科院分区：
文献类型：
--
作者：
Lee, Seunghyup;Kim, Heejin;Yong, Kijung
本文报道了在室温下溅射沉积的Ag/ZnO/Pt结构中单极和双极电阻开关（BRS）共存的现象。该结构在电铸后显示出可再现的和稳定的单极电阻开关，具有高的顺从电流（I-c）= 40 mA，而与施加的电压极性无关。在电铸时具有低I-c = 5 mA，也观察到BRS;这种现象取决于电压极性。两种状态在100次循环中均稳定且可重现。随着Ic的变化，开关模式发生变化，但这种转变是不可逆的。在此基础上，提出了基于灯丝理论的开关机制来解释这两种阻性开关。(C)2010年美国物理学会。[doi：10.1063/1.3489882]
This paper reports the coexistence of unipolar and bipolar resistive switching (BRS) in an Ag/ZnO/Pt structure fabricated by sputtering deposition at room temperature. The structure shows reproducible and stable unipolar resistive switching after electroforming with high compliance current (I-c) = 40 mA, regardless of the applied voltage polarity. With low I-c = 5 mA at electroforming, BRS was also observed; this phenomenon depended on the voltage polarity. Both states were stable and reproducible over 100 cycles. The switching mode was changed with adjusting Ic but the transition was irreversible. Based on the results, switching mechanism based on filament theory is proposed to explain both resistive switching. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489882]