The crystal structure of Cu9.1(1)TeSb3, a stuffed derivative of Cr3Si
The crystal structure of Cu9.1(1)TeSb3, a stuffed derivative of Cr3Si
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Cr3Si 的填充衍生物 Cu9.1(1)TeSb3 的晶体结构
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
S. Karup
中科院分区：
文献类型：
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作者：
I. Søtofte;E. Makovicky;S. Karup
在973 K下制备的金属间化合物Cu9.1（1）TeSb 3是固溶体Cu 64 Te 31 Sb 5 -Cu 70 Te 8 Sb 22的有序成员，对于更有限的组成范围，该固溶体也存在于673 K和1173 K之间。它是结构类型A1 5（Cr 3 Si）的填充衍生物。Te被12个3/4占据的Cu-位置包围，所述Cu-位置在一个经热变形的二十面体（Cu-Te =2.614 A）的顶点中，所述二十面体本身嵌套在一个Sb-二十面体（Cu-Sb = 2.777 A（x 2）和2.603 A）中。Sb阵列对应于Cr 3Si中的Cr阵列。
The intermetallic compound Cu 9.1(1) TeSb 3 prepared at 973 K is an ordered member of the solid solution Cu 64 Te 31 Sb 5 -Cu 70 Te 8 Sb 22 which also exists, for more limited composition ranges, between 673 K and 1173 K. It is a stuffed derivative of the structure type A1 5 (Cr 3 Si). Te is surrounded by twelve 3/4-occupied Cu-positions in the vertices of a cubically-deformed icosahedron (Cu-Te =2.614 A) which itself is nested in an Sb-icosahedron (Cu-Sb = 2.777 A (x 2) and 2.603 A). The Sb array corresponds to the Cr array in Cr 3 Si.