Switched resonators and their applications in a dual-band monolithic CMOS LC-tuned VCO
Switched resonators and their applications in a dual-band monolithic CMOS LC-tuned VCO
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DOI：
10.1109/tmtt.2005.856102
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发表时间：
2006-01
影响因子：
4.3
通讯作者：
Seong-Mo Yim
中科院分区：
文献类型：
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作者：
Seong-Mo Yim
使用 0.18-/spl mu/m CMOS 工艺中的双频带压控振荡器 (VCO) 演示了开关谐振器概念，该概念可用于减小多频带 RF 系统的尺寸，并可在相位噪声和功耗之间实现更好的权衡。为了在开关导通时最大化开关谐振器的 Q 值，电感器之间的互感应保持较低，并且开关晶体管尺寸应优化。开关谐振器的 Q 因数比独立电感器低 /spl sim/30%。该双频段 VCO 的工作频率接近 900 MHz 和 1.8 GHz，相位噪声为 -125 和 -123dBc/Hz，偏移量为 600 kHz，功耗为 16 mW。与单频段 1.8 GHz VCO 相比，双频段 VCO 具有几乎相同的相位噪声和功耗，同时占用的面积小 /spl sim/37%。
A switched resonator concept, which can be used to reduce the size of multiple-band RF systems and which allows better tradeoff between phase noise and power consumption, is demonstrated using a dual-band voltage-controlled oscillator (VCO) in a 0.18-/spl mu/m CMOS process. To maximize Q of the switched resonator when the switch is on, the mutual inductance between the inductors should be kept low and the switch transistor size should be optimized. The Q factor of switched resonators is /spl sim/30% lower than that of a standalone inductor. The dual-band VCO operates near 900 MHz and 1.8 GHz with phase noise of -125 and -123dBc/Hz at a 600-kHz offset and 16-mW power consumption. Compared to a single-band 1.8-GHz VCO, the dual-band VCO has almost the same phase noise and power consumption, while occupying /spl sim/37% smaller area.