Barrier-layer scaling of InAlN/GaN HEMTs
Barrier-layer scaling of InAlN/GaN HEMTs
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DOI：
10.1109/led.2008.919377
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发表时间：
2008-05-01
影响因子：
4.9
通讯作者：
Kohn, E.
中科院分区：
文献类型：
--
作者：
Medjdoub, F.;Alomari, M.;Kohn, E.
我们讨论了在蓝宝石衬底上用金属有机化学气相沉积法生长的势垒厚度在33和3 nm之间的In0.17Al0.83N/GaN高电子迁移率晶体管的特性。最大漏电流（V-G = +2.0 V）随着势垒厚度的减小而减小，这是由于栅正向驱动限制和残余表面耗尽效应的影响。观察到完全夹断和低泄漏。即使使用3纳米的势垒，异质结构和接触也是高度热稳定的（高达1000摄氏度）。
We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 V) decreased with decreasing barrier thickness due to the gate forward drive limitation and residual surface-depletion effect. Full pinchoff and low leakage are observed. Even with 3-nm ultrathin barrier, the heterostructure and contacts are thermally highly stable (up to 1000 degrees C).