Metallic state in a strongly interacting spinless two-valley electron system in two dimensions
Metallic state in a strongly interacting spinless two-valley electron system in two dimensions
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DOI：
10.1103/physrevb.101.045302
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发表时间：
2020-01-14
影响因子：
3.7
通讯作者：
Kravchenko, S., V
中科院分区：
文献类型：
--
作者：
Melnikov, M. Yu;Shashkin, A. A.;Kravchenko, S., V
我们研究了在平行磁场中的高迁移率SiGe/Si/SiGe量子威尔斯中强相互作用的双谷二维电子系统，磁场的强度足以完全抑制电子自旋，从而使电子系统“无自旋”.“电阻率的金属温度依赖性虽然比没有磁场时弱，但即使在去除自旋自由度时仍然很强。几种独立的方法已经被用来建立真正的MIT在无自旋的两谷2D系统中的存在。这与先前在更无序的硅样品上获得的结果形成对比，其中极化磁场导致金属温度行为的完全淬灭。
We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron system "spinless." It occurs that the metallic temperature dependence of the resistivity, although weaker than that in the absence of magnetic field, still remains strong even when the spin degree of freedom is removed. Several independent methods have been used to establish the existence of the genuine MIT in the spinless two-valley 2D system. This is in contrast to the previous results obtained on more disordered silicon samples, where the polarizing magnetic field causes a complete quench of the metallic temperature behavior.