The suppression of dark current for achieving high-performance Ga2O3 nanorod array ultraviolet photodetector
The suppression of dark current for achieving high-performance Ga2O3 nanorod array ultraviolet photodetector
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DOI：
10.1016/j.ceramint.2022.01.071
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发表时间：
2022-01
影响因子：
5.2
通讯作者：
Jianhang Wei;Liangping Shen;Zhuo Zheng;Yongchi Xu;Haoru Wu;Hai Zhou;Hao Wang
中科院分区：
文献类型：
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作者：
Jianhang Wei;Liangping Shen;Zhuo Zheng;Yongchi Xu;Haoru Wu;Hai Zhou;Hao Wang
氧化镓（Ga 2 O3）具有4.9eV的禁带宽度，是下一代日盲光电探测器的理想材料。其单晶纳米棒结构提高了其光电性能，促进了载流子的转化和分离。然而，水热法制备的Ga 2 O3纳米棒中存在大量的氧空位，大大增强了器件的暗电流，降低了器件的开关比，限制了器件的应用。因此，本文采用双重策略来降低水热法制备的金属-半导体-金属结构Ga 2 O3纳米棒PD的暗电流.通过这些双重策略，包括退火处理和聚甲基丙烯酸甲酯（PMMA）涂层的应用，PD的暗电流从1.34 × 10− 7降低到2.04 × 10− 9 A（1 V），导致PD的开/关比高达3.24 × 104。此外，器件的响应率和探测率分别达到1.73 A/W和2.53 × 1012 Jones，比已报道的Ga 2 O3纳米棒阵列光电二极管的性能更好。结果表明，采用新的策略可以大大提高Ga 2 O3基紫外光电探测器的性能。
Gallium oxide (Ga2O3) is a promising candidate for next-generation solar-blind photodetectors (PDs) because of its large bandgap of 4.9 eV. Its single-crystal nanorod structure improves its photoelectric performance, which promotes carrier transformation and separation. However, Ga2O3nanorods fabricated by the hydrothermal method have many oxygen vacancies, which largely enhance the dark current and reduce the on/off ratio of PDs, restricting application of such devices. Therefore, in this paper, dual strategies are applied to reduce the dark current of a metal–semiconductor–metal-structured Ga2O3nanorod PD fabricated by the hydrothermal method. Through these dual strategies, which include annealing treatment and the application of a polymethyl methacrylate (PMMA) coating, the dark current of the PD is reduced from 1.34 × 10−7to 2.04 × 10−9A at 1 V, resulting in the on/off ratio of the PD reaching as high as 3.24 × 104. Besides, the responsivity and detectivity of the device reach 1.73 A/W and 2.53 × 1012Jones respectively, which represents better performance than those of other reported Ga2O3nanorod array PDs. Results have shown that the new strategy adopted can greatly improve the performance of Ga2O3-based ultraviolet photodetectors.