Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques
Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques
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DOI：
10.1109/2944.640628
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发表时间：
1997-06
影响因子：
4.9
通讯作者：
Chi‐Kuang Sun;S. Keller;Tien‐Lung Chiu;G. Wang;M. Minsky;J. Bowers;S. Denbaars
中科院分区：
文献类型：
--
作者：
Chi‐Kuang Sun;S. Keller;Tien‐Lung Chiu;G. Wang;M. Minsky;J. Bowers;S. Denbaars
我们使用时间分辨光致发光（PL）技术对 InGaN-GaN 单量子阱进行了与阱宽度相关的研究。在室温 (RT) 下，载流子复合被发现主要由界面相关的非辐射过程主导。 RT 处的主要辐射复合是通过带间自由载流子进行的。对于以较高生长速率生长的样品，我们观察到更长的发光寿命，这归因于改进的量子阱（QW）界面。在低温下，发现载流子复合以通过自由激子、束缚激子和自由载流子的组合的辐射复合为主。随着 QW 厚度的减小，观察到辐射激子寿命的缩短。
We present a well-width-dependent study of InGaN-GaN single-quantum wells using a time-resolved photoluminescence (PL) technique. At room temperature (RT), carrier recombination was found to be dominated by interface-related nonradiative processes. The dominant radiative recombination at RT was through band-to-band free carriers. For the sample grown at a higher growth rate, we observed a longer luminescence lifetime, which was attributed to an improved quantum-well (QW) interface. At low temperatures, the carrier recombination was found to be dominated by radiative recombination through a combination of free excitons, bound excitons, and free carriers. A decrease of radiative exciton lifetime was observed with decreased QW thickness.