Photoresponse of sol-gel-synthesized ZnO nanorods
Photoresponse of sol-gel-synthesized ZnO nanorods
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DOI：
10.1063/1.1763633
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发表时间：
2004-06-14
影响因子：
4
通讯作者：
Kim, GT
中科院分区：
文献类型：
--
作者：
Ahn, SE;Lee, JS;Kim, GT
采用溶胶-凝胶法在95 ℃左右的低温下在SiO2/Si衬底上生长了ZnO纳米棒。六水合硝酸锌和六亚甲基四胺溶液的浓度越高，ZnO纳米棒的直径和长度越大。ZnO纳米棒网络的电流-电压特性遵循典型的非线性行为，在λ以下具有显著的光响应
ZnO nanorods were grown on SiO2/Si substrates by a sol-gel method at low temperatures of around T=95 degreesC. The diameters and the lengths of ZnO nanorods increased at high concentrations of zinc nitrate hexahydrate and methenamine solution. Current-voltage characteristics of the ZnO nanorods network followed a typical nonlinear behavior with significant photoresponse below lambda