Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires
Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires
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DOI：
10.1021/nl503616w
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发表时间：
2015-01-01
期刊：
影响因子：
10.8
通讯作者：
Holleitner, A. W.
中科院分区：
文献类型：
--
作者：
Erhard, N.;Sarwar, A. T. M. Golam;Holleitner, A. W.
InGaN纳米线是许多未来光电器件的合适构建块。我们表明，线性渐变的铟含量沿着的纳米线轴从GaN到InN引入了内部电场引起的光电流。与定量能带结构模拟相一致，我们观察到作为光子通量的函数的测量光电流的符号变化。这种负的差分光电流开辟了一条通往新型的基于光电二极管的光电探测器的道路。我们证明了纳米线的光电流响应快至1.5 ps。
InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps.