Silicon synaptic depression
Silicon synaptic depression
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硅突触抑制
DOI：
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发表时间：
2001
影响因子：
1.9
通讯作者：
Richard Hans Robert Hahnloser
中科院分区：
文献类型：
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作者：
C. Rasche;Richard Hans Robert Hahnloser
摘要：最近对皮层神经元之间突触传递的活动依赖性抑制的定量描述，导致了许多有趣的可能的计算影响的建议。 基于一个简单的生物模型，我们已经构建了一个模拟电路，模拟短期抑制突触的属性。该电路包括只有7个晶体管和两个电容器每个突触，并能够重现计算功能的抑制突触，如1/F法，检测长间隔的突触前沉默和敏感性重新分配的突触前放电率。它为实现具有动态突触的神经网络提供了一个有用的基础。
Abstract. The recent quantitative description of activity-dependent depression in the synaptic transmission between cortical neurons has lead to many interesting suggestions of possible computational implications. Based on a simple biological model, we have constructed an analog circuit that emulates the properties of short-term depressing synapses. The circuit comprises only seven transistors and two capacitors per synapse, and is able to reproduce computational features of depressing synapses such as the 1/F law, the detection of long intervals of presynaptic silence and the sensitivity to redistribution of presynaptic firing rates. It provides a useful basis for implementing neural networks with dynamical synapses.