Single-Crystal Synthesis
Single-Crystal Synthesis
复制标题
DOI：
10.1093/oso/9780199602025.003.0006
复制
发表时间：
2021-06
期刊：
影响因子：
--
通讯作者：
G. Cao;L. DeLong
中科院分区：
文献类型：
--
作者：
G. Cao;L. DeLong
生长4d-和5d-过渡金属氧化物的单晶通常是困难的，因为它们倾向于不一致地形成，以及具有高蒸气压和高熔点。两种晶体生长技术通常用于过渡金属氧化物-助熔剂和浮区技术;每一种都有优点和缺点。这两种技术的成熟能力使得几乎所有稳定材料的单晶生长成为可能。这两种技术的一些基本方面进行了讨论，并提出了一些一般性意见的晶体生长的4D和5D过渡金属氧化物。大多数4d-和5d-过渡金属氧化物的晶体结构固有地扭曲。正在开发一种创新的“场改变”技术，即外加磁场调整磁矩，并通过强自旋轨道相互作用和磁致弹性耦合，在高温下改变晶体结构。初步结果表明，场改变技术是非常有效的解决自旋轨道耦合氧化物的物理性质。
Growing single crystals of 4d- and 5d-transition metal oxides is often difficult, as they tend to form incongruently, as well as having high vapor pressure and high melting points. Two crystal growth techniques are commonly used for transition metal oxides—flux and floating-zone techniques; each has advantages and disadvantages. An established capability in both techniques makes it possible to grow single crystals of almost all stable materials. Some basic aspects of both techniques are discussed, and a few general remarks on crystal growth of 4d- and 5d-transition metal oxides are presented. Crystal structures of most 4d- and 5d-transition metal oxides are inherently distorted. An innovative “field-altering” technique is under development, in which an applied magnetic field aligns magnetic moments and, through strong spin-orbit interactions and magnetoelastic coupling, alters crystal structures at high temperatures. Preliminary results show that a field-altering technology is highly effective for resolving physical properties of spin-orbit-coupled oxides.