Enhanced MOS 1/f noise due to near-interfacial oxygen deficiency
Enhanced MOS 1/f noise due to near-interfacial oxygen deficiency
复制标题
DOI：
10.1016/0022-3093(95)00138-7
复制
发表时间：
1995-07
影响因子：
3.5
通讯作者：
D. Fleetwood;W. L. Warren;M. Shaneyfelt;R. Devine;J. Scofield
中科院分区：
文献类型：
--
作者：
D. Fleetwood;W. L. Warren;M. Shaneyfelt;R. Devine;J. Scofield
比较了MOS晶体管的1f噪声和辐射响应。一个很强的相关性被发现之间的前和后的辐射噪声的晶体管和它们的阈值电压偏移由于辐射诱导的氧化物陷阱电荷。据推断，噪声是由氧化物陷阱的子集，这被称为“边界陷阱”。这些缺陷是近界面的氧化物陷阱，可以与Si的时间尺度上的测量，并已被误认为是界面陷阱在以前的一些工作中的1 f噪声和/或辐射效应的MOS器件。电子顺磁共振和辐射效应研究的比较提供了令人信服的证据表明，辐射诱导的氧化物陷阱电荷与硅SiO2界面附近的缺氧中心（氧空位和空位复合物）。它的结论是，这些相同的缺陷也提高了MOS晶体管的1 f噪声，这应该有助于解决长期存在的争论的MOS噪声的起源。辐射引起的边界陷阱电荷密度的独立估计使用双晶体管技术，结合阈值电压和电荷泵测量同意与1 f噪声估计。
The 1 f noise and radiation response of MOS transistors have been compared. A strong correlation is found between the pre- and post-irradiation noise of the transistors and their threshold-voltage shifts due to radiation-induced oxide-trap charge. It is inferred that the noise is caused by a subset of the oxide traps, which is referred to as ‘border traps’. These defects are near-interfacial oxide traps which can communicate with the Si on the timescales of the measurements, and have been mistaken for interface traps in some previous work on 1 f noise and/or radiation effects on MOS devices. Comparisons of electron-paramagnetic-resonance and radiation-effects studies offer compelling evidence that radiation-induced oxide-trap charge is associated with oxygen-deficient centers (oxygen vacancies and vacancy complexes) near the Si SiO2interface. It is concluded that these same defects also enhance the 1 f noise of MOS transistors, which should help to resolve the long-standing debate on the origin of MOS noise. Independent estimates of radiation-induced border-trap charge densities using a dual-transistor technique that combines threshold-voltage and charge-pumping measurements agree well with 1 f noise estimates.