Metal-insulator transition in transition metal dichalcogenide heterobilayer moire superlattices
Metal-insulator transition in transition metal dichalcogenide heterobilayer moire superlattices
复制标题
DOI：
10.1103/physrevb.103.l241110
复制
发表时间：
2021-06-21
影响因子：
3.7
通讯作者：
Potasz, Pawel
中科院分区：
文献类型：
--
作者：
Morales-Duran, Nicolas;MacDonald, Allan H.;Potasz, Pawel
在二维半导体异质双层中形成的莫尔超晶格提供了一种新的哈伯德模型物理实现，其中每个有效原子的电子数可以任意调节。我们报告了一个精确的对角化研究的电子性质的半填充窄莫尔带，其中相关强度的变化，通过改变扭转角或相互作用强度。我们构建了一个双层的相图，确定金属-绝缘体相变发生的地方，估计在绝缘相的电荷间隙的大小，并评论过渡的性质和次主导的相互作用参数的重要性。
Moire superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics in which the number of electrons per effective atom can be tuned at will. We report on an exact diagonalization study of the electronic properties of half-filled narrow moire bands in which correlation strengths are varied by changing twist angles or interaction strengths. We construct a phase diagram for the bilayer, identifying where the metal-insulator phase transition occurs, estimating the sizes of the charge gaps in the insulating phase, and commenting on the nature of the transition and the importance of subdominant interaction parameters.