Chemical mixing in molten-salt for preparation of high-performance spinel lithium manganese oxides: Duplication of morphology from nanostructured MnO2 precursors to targeting materials
Chemical mixing in molten-salt for preparation of high-performance spinel lithium manganese oxides: Duplication of morphology from nanostructured MnO2 precursors to targeting materials
复制标题
熔盐中的化学混合制备高性能尖晶石锂锰氧化物:从纳米结构 MnO2 前体到靶向材料的形态复制
DOI:
10.1016/j.electacta.2012.10.109
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发表时间:
2013-01
影响因子:
6.6
通讯作者:
Dihua Wang
中科院分区:
文献类型:
--
作者:
Wenting Liu;Xuhui Mao;Hua Zhu;Dihua Wang
The chemical mixing strategy involving molten-salt lithiation at 450°C and post-annealing at 800°C on formation of morphological replica of spinel lithium manganese oxides from nanostructured potassium-contained manganese oxides has been discussed in terms of influences of Li/Mn stoichiometry during molten-salt mixing, crystal phases and microstructure of precursory nanostructured MnO2. It is exhibited that α-MnO2with suitable-sized one-dimensional tunnels in lattices facilitates the formation of chemical-level mixture of Li, Mn and O, and ensuring morphological retention after molten-salt lithiation. Compared to α-MnO2, the interlayer gap in δ-MnO2crystal lattices is too large to ensure chemical-level mixture or morphology retention. It is suggested that the precursory Li/Mn ratio during molten-salt treatment should be prudently controlled, aiming to restraining excessive surface-absorption of Li and facilitating an effective Li/K exchange process. Also, one-dimensional nanoarchitectured precursory manganese oxide is advantageous over its nanoparticle counterparts on morphological retention after post-annealing process, due to its the enhanced stability against large local strains. Electrochemical measurements show that the prepared phase-pure and highly crystalline spinel-typed lithium manganese oxide nanorods in morphological replica of precursory α-MnO2nanorods deliver a reversible specific capacity 94mAhg−1upon 200 times of charge–discharge cycling at a rate of 10C.
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通讯作者:
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