Top-down processed silicon nanowire transistor arrays for biosensing
Top-down processed silicon nanowire transistor arrays for biosensing
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DOI：
10.1002/pssa.200880475
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发表时间：
2009-03-01
影响因子：
2
通讯作者：
Ingebrandt, Sven
中科院分区：
文献类型：
--
作者：
Vu, Xuan Thang;Eschermann, Jan Felix;Ingebrandt, Sven
我们描述了硅纳米线阵列的制造，电气和电化学特性，这是在一个自上而下的方法，使用相结合的纳米压印光刻和湿法化学蚀刻处理。我们使用顶部硅层作为接触线，并观察到这些线的注入和随后的退火对器件性能的影响。此外，我们发现了一个亚阈值斜率依赖于导线的大小。当在液体环境中操作时，导线可以用作pH传感器。我们的特点是在线性范围内的pH值的敏感性，并在阈下操作制度。作为后来在生物测定中使用传感器的第一个原理验证实验，我们监测了金属丝表面上多层金属丝的积累。(C)2009 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆
We describe the fabrication, electrical and electrochemical characterization of silicon nanowire arrays, which were processed in a top-down approach using combined nanoimprint lithography and wet chemical etching. We used the top silicon layer as contact line and observed an influence of implantation and subsequent annealing of these lines to the device performance. In addition we found a subthreshold slope dependence on wire size. When operated in a liquid environment, wires can be utilized as pH sensors. We characterized the pH sensitivity in the linear range and in the subthreshold operation regime. As a first proof-of-principle experiment for the later use of the sensors in bioassays, we monitored the buildup of polyelectrolyte multilayers on the wire surface. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim