Growth and Field Emission Study of Molybdenum Oxide Nanostars
Growth and Field Emission Study of Molybdenum Oxide Nanostars
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DOI：
10.1021/jp9056237
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发表时间：
2009-11-05
影响因子：
3.7
通讯作者：
Moshfegh, Alireza Z.
中科院分区：
文献类型：
--
作者：
Khademi, Ali;Azimirad, Rouhollah;Moshfegh, Alireza Z.
本文报道了在硅衬底上生长的MoO2纳米星的场发射特性及其在不同真空间隙中的发射性能。采用热气相沉积法生长了一种新型钼氧化物结构，命名为纳米星，其长度约为1μm，厚度约为50nm，宽度在500-700nm范围内。通过扫描电子显微镜、高分辨率透射电镜对所制备的纳米星的形貌、结构、成分和化学态进行了表征。电子显微镜、X射线衍射(XRD)和X射线光电子能谱(XPS) 根据XRD分析，生长的纳米结构由结晶Mo4O11和结晶MoO2结构组成。 XPS 分析表明，合成的纳米结构含有类似于 21.2% Mo6+、类似于 16.2% Mo5+、类似于 39.8% Mo4+ 和类似于 22.8% Mo delta+（其中 0 < delta < 4）。 TEM 观察表明合成的样品由 MoO2 纳米星组成；覆盖在含有 Mo4O11 纳米粒子的晶体薄膜上。在500μm真空间隙下，纳米星的开启发射场和增强因子分别为1 0 V/μm和19 070。这些优异的发射性能归因于纳米星的特殊结构。因此，这些纳米星可用于真空微电子应用。
The field emission properties of MoO2 nanostars grown on a silicon substrate and their emission performance in various vacuum gaps are reported in this article A new structure of molybdenum oxides, named a nanostar, is grown by thermal vapor deposition with a length of similar to 1 mu m, a thickness of similar to 50 nm, and its width in the range of 500-700 nm The morphology, structure, composition, and chemical states of the prepared nanostars were characterized by scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) According to XRD analysis, the grown nanostructures are composed of both crystalline Mo4O11 and crystalline MoO2 structures. XPS analysis showed that the synthesized nanostructures contained similar to 21.2% Mo6+, similar to 16.2% Mo5+, similar to 39.8% Mo4+, and similar to 22.8% Mo delta+ (where 0 < delta < 4). TEM observations indicate that the synthesized sample consists of MoO2 nanostars; over a crystalline thin film containing Mo4O11 nanoparticles. The turn-on emission field and the enhancement factor of nanostars are found to be 1 0 V/mu m and 19 070 at the vacuum gap of 500 mu m, respectively. These excellent emission properties are attributed to the special structure of the nanostars. Therefore, these nanostars can be used in vacuum microelectronic applications.