Room-temperature CW operation of a nitride-based vertical-cavity surface-emitting laser using thick GaInN quantum wells
Room-temperature CW operation of a nitride-based vertical-cavity surface-emitting laser using thick GaInN quantum wells
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DOI：
10.7567/jjap.55.05fj11
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发表时间：
2016-04
影响因子：
1.5
通讯作者：
Takashi Furuta;Kenjo Matsui;K. Horikawa;Kazuki Ikeyama;Yugo Kozuka;S. Yoshida;Takanobu Akagi;T. T
中科院分区：
文献类型：
--
作者：
Takashi Furuta;Kenjo Matsui;K. Horikawa;Kazuki Ikeyama;Yugo Kozuka;S. Yoshida;Takanobu Akagi;T. T
利用厚GaInN量子阱有源区和AlInN/GaN分布布拉格反射器实现了GaN基垂直腔面发射激光器的室温连续波工作。我们首先研究了发光二极管（LED）结构中6 nm GaInN 5量子阱有源区的以下两个特性。在高电流密度（~ 10 kA/cm ~ 2）下，6 nm GaInN 5量子阱的光输出功率与标准3 nm 5量子阱的光输出功率相同甚至更高.此外，我们发现空穴注入到最远的量子阱从p层是足够的。然后，我们展示了GaN基VCSEL与6 nm 5量子阱，导致在3.5%的光学限制因子。室温下连续工作时的阈值电流密度为7.5 kA/cm ~ 2，发射光谱为0.4 nm，峰值波长为413.5 nm。
We demonstrated a room-temperature (RT) continuous-wave (CW) operation of a GaN-based vertical-cavity surface-emitting laser (VCSEL) using a thick GaInN quantum well (QW) active region and an AlInN/GaN distributed Bragg reflector. We first investigated the following two characteristics of a 6 nm GaInN 5 QWs active region in light-emitting diode (LED) structures. The light output power at a high current density (∼10 kA/cm2) from the 6 nm GaInN 5 QWs was the same or even higher than that from standard 3 nm 5 QWs. In addition, we found that hole injection into the farthest QW from a p-layer was sufficient. We then demonstrated a GaN-based VCSEL with the 6 nm 5 QWs, resulting in the optical confinement factor of 3.5%. The threshold current density under CW operation at RT was 7.5 kA/cm2 with a narrow (0.4 nm) emission spectrum of 413.5 nm peak wavelength.