Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
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DOI：
10.1063/1.4942369
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发表时间：
2016-02
影响因子：
4
通讯作者：
H. Okumura;D. Martin;M. Malinverni;N. Grandjean
中科院分区：
文献类型：
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作者：
H. Okumura;D. Martin;M. Malinverni;N. Grandjean
我们用氨分子束外延生长了重掺镁GaN。使用较低的生长温度(740℃)可以减少引起p型掺杂补偿的施主类缺陷(<；3×1017 cm−3)的掺入。利用霍尔效应测得的空穴浓度在室温下高达2×1019 cm−3。利用如此高的镁掺杂水平，我们制备了无偏振辅助隧道效应的GaN反向二极管。在室温下，反向偏置为−1V时，反向二极管的隧道电流密度为225A/cm~2。
We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (<3 × 1017 cm−3) responsible for p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm−3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm−3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of −1 V at room temperature.