Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films
Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films
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DOI：
10.1063/1.2748312
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发表时间：
2007-06-11
影响因子：
4
通讯作者：
Hwang, Cheol Seong
中科院分区：
文献类型：
--
作者：
Kim, Kyung Min;Choi, Byung Joon;Hwang, Cheol Seong
研究了电压扫描模式下二氧化钛薄膜的电阻转换机理。从观察到的铂/二氧化钛/铂样品的软集和Ir(O)/二氧化钛/铂样品的极性相关开关行为来看，阳极界面附近导电丝的局部断裂和恢复是开关机制。这与作者最近的观察一致[K.Kim，Electrchem]。固态Lett。9，G343(2006)]，其中开关由靠近阳极的层控制。似乎大部分细丝在切换过程中被保存下来，只有靠近阳极的一小部分薄膜有助于切换。(C)2007年美国物理研究所。
The resistance switching mechanism of TiO2 films under voltage sweep mode was investigated. From the observed soft set of Pt/TiO2/Pt sample and from the polarity-dependant switching behavior of Ir(O)/TiO2/Pt sample, local rupture and recovery of conducting filaments near the anode interface wer identified as the switching mechanism. This is consistent with the authors' recent observation [K. Kim , Electrchem. Solid-State Lett. 9, G343 (2006)] of the resistance switching property of Al2O3/TiO2 multilayers, where switching was controlled by the layer close to the anode. It appears that most parts of the filaments are preserved during switching and only a small portion of the film near the anode contributes to switching. (c) 2007 American Institute of Physics.