Highly Efficient Electron Transport Obtained by Doping PCBM with Graphdiyne in Planar-Heterojunction Perovskite Solar Cells
Highly Efficient Electron Transport Obtained by Doping PCBM with Graphdiyne in Planar-Heterojunction Perovskite Solar Cells
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在平面异质结钙钛矿太阳能电池中用石墨炔掺杂 PCBM 获得高效电子传输
DOI：
10.1021/acs.nanolett.5b00787
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发表时间：
2015-04-01
期刊：
影响因子：
10.8
通讯作者：
Li, Yuliang
中科院分区：
文献类型：
--
作者：
Kuang, Chaoyang;Tang, Gang;Li, Yuliang
有机-无机钙钛矿太阳能电池最近出现在光化学研究的最前沿。本文首次将一种新型的二维碳材料石墨二炔（GD）掺杂到具有倒置结构（ITO/PEDOT：PSS/CH_3 NH_3 PbI_3-xCl_x/PCBM：GD/C-60/Al）的钙钛矿太阳能电池的PCBM层中，以改善电子输运。优化的PCE为14.8%。此外，平均功率转换效率（PCE）的PCBM：GD为基础的设备被观察到28.7%的增强（13.9%对10.8%）相比，纯PCBM为基础的。根据扫描电子显微镜、导电原子力显微镜、空间电荷限制电流和光致发光猝灭测量，PCBM：GD基器件的增强的电流密度和填充因子归因于在钙钛矿层上更好的覆盖、改善的导电性、强的电子迁移率和有效的电荷提取。小的滞后和稳定的功率输出在工作条件下（14.4%）也已被证明为PCBM：GD为基础的设备。器件性能的提高表明，基于GD掺杂的薄膜电导率和界面覆盖率的改善带来了器件的高PCE和数据的重复性。在这项工作中，GD展示了巨大的潜力，应用在光伏领域，由于其网络的离域p系统和独特的电导率优势。
Organic-inorganic perovskite solar cells have recently emerged at the forefront of photovoltaics research. Here, for the first time, graphdiyne (GD), a novel two dimension carbon material, is doped into PCBM layer of perovskite solar cell with an inverted structure (ITO/PEDOT:PSS/CH3NH3PbI3-xClx/PCBM:GD/C-60/Al) to improve the electron transport. The optimized PCE of 14.8% was achieved. Also, an average power conversion efficiency (PCE) of PCBM:GD-based devices was observed with 28.7% enhancement (13.9% vs 10.8%) compared to that of pure PCBM-based ones. According to scanning electron microscopy, conductive atomic force microscopy, space charge limited current, and photoluminescence quenching measurements, the enhanced current density and fill factor of PCBM:GD-based devices were ascribed to the better coverage on the perovskite layer, improved electrical conductivity, strong electron mobility, and efficient charge extraction. Small hysteresis and stable power output under working condition (14.4%) have also been demonstrated for PCBM:GD based devices. The enhanced device performances indicated the improvement of film conductivity and interfacial coverage based on GD doping which brought the high PCE of the devices and the data repeatability. In this work, GD demonstrates its great potential for applications in photovoltaic field owing to its networks with delocalized p-systems and unique conductivity advantage.