24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer
24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer
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DOI：
10.4229/28theupvsec2013-2ao.2.5
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发表时间：
2013-11
影响因子：
3
通讯作者：
M. Taguchi;Ayumu Yano;S. Tohoda;Kenta Matsuyama;Yuya Nakamura;Takeshi Nishiwaki;K. Fujita;E. Mar
中科院分区：
文献类型：
--
作者：
M. Taguchi;Ayumu Yano;S. Tohoda;Kenta Matsuyama;Yuya Nakamura;Takeshi Nishiwaki;K. Fujita;E. Mar
在98 μ m厚的实际尺寸（101.8cm~2，总面积）的本征薄层结构异质结中，获得了24.7%的研究水平的新记录转换效率。这是任何实际尺寸（100平方厘米及以上）的晶体硅基太阳能电池的世界高度记录。自从我们宣布之前的23.7%的记录以来，我们一直在继续减少a-Si和c-Si之间异质界面处的复合损耗，同时通过改进具有较低电阻率的银浆和优化a-Si层的厚度来降低电阻损耗。使用一种新的技术，使形成的a-Si层的c-Si基板上的质量甚至更高，同时限制损害的基板表面，Voc已从0.745提高到0.750 V。我们还成功地提高了填充因子从0.809到0.832。
A new record conversion efficiency of 24.7% was attained at the research level by using a heterojunction with intrinsic thin-layer structure of practical size (101.8 cm2, total area) at a 98-μm thickness. This is a world height record for any crystalline silicon-based solar cell of practical size (100 cm2 and above). Since we announced our former record of 23.7%, we have continued to reduce recombination losses at the hetero interface between a-Si and c-Si along with cutting down resistive losses by improving the silver paste with lower resistivity and optimization of the thicknesses in a-Si layers. Using a new technology that enables the formation of a-Si layer of even higher quality on the c-Si substrate, while limiting damage to the surface of the substrate, the Voc has been improved from 0.745 to 0.750 V. We also succeeded in improving the fill factor from 0.809 to 0.832.