Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices
Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices
复制标题
DOI：
10.1109/led.2008.919779
复制
发表时间：
2008-04
影响因子：
4.9
通讯作者：
G. Riedel;J. Pomeroy;K. Hilton;J. O. Maclean;D. Wallis;M. Uren;T. Martin;Martin Kuball
中科院分区：
文献类型：
--
作者：
G. Riedel;J. Pomeroy;K. Hilton;J. O. Maclean;D. Wallis;M. Uren;T. Martin;Martin Kuball
利用时间分辨拉曼热成像技术研究了AlGaN/GaN电子器件（高电子迁移率晶体管和非门控器件）的热动力学特性，时间分辨拉曼热成像技术的时间分辨率为.研究了器件有源区向衬底和器件内部的热扩散。在器件的不同位置确定了热响应相对于电脉冲的延迟。AlGaN/GaN器件的准绝热加热在器件操作的第一部分中示出。在长电脉冲下，器件的温度可达直流温度。
Time-resolved Raman thermography, with a temporal resolution of , was used to study the thermal dynamics of AlGaN/GaN electronic devices (high-electron mobility transistors and ungated devices). Heat diffusion from the device active region into the substrate and within the devices was studied. Delays in the thermal response with respect to the electrical pulse were determined at different locations in the devices. Quasi-adiabatic heating of the AlGaN/GaN devices is illustrated within the first of device operation. The temperature of devices on SiC was found to reach of the dc temperature when operated with -long electrical pulses.