Programming current density reduction for elevated-confined phase change memory with a self-aligned oxidation TiWOx heater
Programming current density reduction for elevated-confined phase change memory with a self-aligned oxidation TiWOx heater
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DOI：
10.1063/1.4902872
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发表时间：
2014-11
影响因子：
4
通讯作者：
Hongxin Yang;Hock-Koon Lee;R. Zhao;Luping P. Shi;T. Chong
中科院分区：
文献类型：
--
作者：
Hongxin Yang;Hock-Koon Lee;R. Zhao;Luping P. Shi;T. Chong
相变存储器（PCM）的高编程电流密度是其规模化和高密度芯片开发的障碍。本文提出了一种具有自对准氧化加热器的升高限制的PCM（e-PCM），通过增加焦耳热同时减少热损失来降低编程电流密度。制备并测试了具有自对准TiWOx加热器的200 nm直径尺寸的e-PCM。在100 ns脉冲下，编程电流为350 μA，编程电流密度为1.12 MA/cm 2。低电流密度表明这种结构是高密度PCM芯片应用的有希望的候选者。
The high programming current density of phase change memory (PCM) is an obstacle for its scaling and high density chip development. In this paper, an elevated-confined PCM (e-PCM) with self-aligned oxidation heater was proposed to reduce the programming current density by increasing the Joule heat and reducing heat loss simultaneously. 200 nm diameter size e-PCM with self-aligned TiWOx heater was fabricated and tested. The RESET current is 350 μA with 100 ns pulse and the corresponding programming current density is 1.12 MA/cm2. The low current density indicates this structure as a promising candidate for high density PCM chip applications.