Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation
Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation
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DOI：
10.1143/jjap.40.l29
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发表时间：
2001-01-15
期刊：
影响因子：
--
通讯作者：
Murase, K
中科院分区：
文献类型：
--
作者：
Horiguchi, S;Nagase, M;Murase, K
利用原子力显微镜（AFM）测量的硅单电子晶体管（SET）的几何结构、第一性原理计算得到的PADOX过程中压应力引起的带隙减小以及有效势方法，研究了PADOX工艺制备的SET中电势分布的来源.提出了一种可能的机制，负责SET操作的电位分布的形成，在SET中的硅线区域的宽度减小产生隧道势垒，而压应力通过带隙减小降低导带的底部，并形成对应于隧道势垒中的岛的势阱。
The origin of the potential profile in silicon single-electron transistors (SETs) fabricated using pattern-dependent oxidation (PADOX) is investigated by making use of the geometric structure measured by atomic force microscope (AFM), the bandgap reduction due to compressive stress generated during PADOX obtained using the first-principles calculation, and the effective potential method. A probable mechanism for the formation of the potential profile responsible for SET operation is proposed, The width reduction in the silicon wire region in the SET produces a tunnel barrier, while the compressive stress lowers the bottom of the conduction band through the bandgap reduction and forms a potential well corresponding to an island in the tunnel barrier.